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          首頁 >IRF7341>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF7341

          絲?。?strong>IRF7341;Package:SOP-8;Generation V Technology

          The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

          文件:379.66 Kbytes 頁數(shù):7 Pages

          UMW

          友臺半導體

          IRF7341

          MOSFET

          Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

          文件:340.07 Kbytes 頁數(shù):7 Pages

          EVVOSEMI

          翊歐

          IRF7341

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:134.99 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7341TR

          絲?。?strong>IRF7341;Package:SOP-8;MOSFET

          Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

          文件:340.07 Kbytes 頁數(shù):7 Pages

          EVVOSEMI

          翊歐

          IRF7341TR

          絲?。?strong>IRF7341;Package:SOP-8;Generation V Technology

          The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

          文件:379.66 Kbytes 頁數(shù):7 Pages

          UMW

          友臺半導體

          IRF7341

          采用 SO-8 封裝的 55V 雙 N 通道 HEXFET 功率 MOSFET

          \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 動態(tài)的dv/dt額定值\n? 快速開關\n? 雙 N 通道 MOSFET;

          Infineon

          英飛凌

          IRF7341GPBF

          HEXFET? Power MOSFET

          Description These HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

          文件:205.3 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7341GTRPbF

          HEXFET? Power MOSFET

          Description These HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

          文件:205.3 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7341PBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:158.59 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7341Q

          HEXFET Power MOSFET

          Description Specifically designed for Automotive applications, these HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 17

          文件:156.51 Kbytes 頁數(shù):9 Pages

          IRF

          技術參數(shù)

          • OPN:

            IRF7341TRPBF

          • Qualification:

            Non-Automotive

          • Package name:

            SO8

          • VDS max:

            55 V

          • RDS (on) @10V max:

            50 m?

          • RDS (on) @4.5V max:

            65 m?

          • ID @25°C max:

            4.7 A

          • QG typ @10V:

            24 nC

          • Polarity:

            N+N/N+N

          • VGS(th) min:

            1 V

          • Technology:

            IR MOSFET?

          供應商型號品牌批號封裝庫存備注價格
          INFINEON/英飛凌
          25+
          SO8
          20300
          INFINEON/英飛凌原裝特價IRF7341即刻詢購立享優(yōu)惠#長期有貨
          詢價
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          IR
          24+
          SOP8
          6000
          原裝正品,價格優(yōu)勢!
          詢價
          IOR
          23+
          SO-8
          7000
          絕對全新原裝!100%保質量特價!請放心訂購!
          詢價
          IOR
          24+
          SOP8
          717
          詢價
          IR
          13+
          SOP-8
          45938
          原裝分銷
          詢價
          IR
          2015+
          SOP/DIP
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          IOR
          05+
          原廠原裝
          8001
          只做全新原裝真實現(xiàn)貨供應
          詢價
          IR
          25+
          PLCC28
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          IR
          2016+
          SOP8
          3000
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          更多IRF7341供應商 更新時間2026-1-19 17:05:00
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