絲?。?strong>G15M；Package：SOD-123FL；Surface Mount General Purpose Rectifier G15A Through G15M

FEATURES Low profile package Ideal for automated placement Glass passivated chip junction Switching for general purpose High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.06957 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

絲?。?a target="_blank" title="Marking" href="/g15m65df2/marking.html">G15M65DF2；Package：D2PAK；Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D2PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.11098 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g15m120df3/marking.html">G15M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability

文件：1.05434 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g15m120df3/marking.html">G15M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability

文件：1.05434 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g15m65df2/marking.html">G15M65DF2；Package：D2PAK；Trench gate field-stop IGBT M series, 650 V, 15 A low loss

文件：1.08019 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?strong>G15M；Package：SOD-123FL；Surface Mount General Purpose Rectifier G15A Through G15M

FEATURES Low profile package Ideal for automated placement Glass passivated chip junction Switching for general purpose High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.06957 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D2PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

文件：1.11098 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

General Purpose Rectifier

文件：125.68 Kbytes 頁數(shù)：2 Pages

FS

General Purpose Rectifier

文件：144.99 Kbytes 頁數(shù)：2 Pages

YANGJIE

揚杰電子