絲?。?strong>G18P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G18P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：644.41 Kbytes 頁數：6 Pages

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谷峰半導體

絲?。?strong>G18P03；Package：SOP-8；P-Channel Trench Power MOSFET

General Description The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V. This device is suitable for use as a wide variety of applications. Features High Power and current handing capability Surface Mount

文件：2.09989 Mbytes 頁數：6 Pages

GOFORD

谷峰半導體

絲?。?strong>G18P03；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G18P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：644.41 Kbytes 頁數：6 Pages

GOFORD

谷峰半導體

絲?。?strong>G18P03；Package：SOP-8；P-Channel Trench Power MOSFET

General Description The G18P03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -5V. This device is suitable for use as a wide variety of applications. Features High Power and current handing capability Surface Mount

文件：2.09989 Mbytes 頁數：6 Pages

GOFORD

谷峰半導體