絲?。?a target="_blank" title="Marking" href="/g15m120df3/marking.html">G15M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability

文件：1.05434 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

1200 V、15 A溝槽柵場截止低損耗M系列IGBT

此器件使用先進的專有溝槽柵場截止結(jié)構(gòu)技術(shù)，作為M系列IGBT的一部分，它代表了為了使逆變系統(tǒng)效率最大化同時又兼顧 了低損耗和短路能力的最佳折中。此外，它的VCE(sat)正溫度系數(shù)特性和超緊密的參數(shù)分布，使得并聯(lián)操作更為安全。 ? ? 10μs的短路耐受時間 \n? VCE(sat) = 1.85 V (typ.) @ IC = 15 A \n? 緊密的參數(shù)分布 \n? ? 安全并聯(lián) \n? 低熱阻 \n? ? 軟恢復(fù)反并聯(lián)二極管;

ST

意法半導(dǎo)體

Package：TO-247-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 30A 259W

STMICROELECTRONICS

意法半導(dǎo)體

Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability

文件：1.05434 Mbytes 頁數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體