絲?。?strong>G17；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR SWITCHING DESCRIPTION The 2SK1589, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOSFET has low on-state resistance and excellent switching characteristics, it is suitable for

文件：592.28 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

絲?。?strong>G17；Package：PowerDI3333-8；N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features ? 100 Unclamped Inductive Switching, Test in Production – Ensures more reliable and robust end application ? Low RDS(ON) – Ensures on state losses are minimized ? Small form factor thermally efficient package enables higher density end products ? Occupies just 33 of the board area o

文件：517.32 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

絲?。?strong>G17；Package：PowerDI3333-8；N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features ? 100 Unclamped Inductive Switching, Test in Production – Ensures more reliable and robust end application ? Low RDS(ON) – Ensures on state losses are minimized ? Small form factor thermally efficient package enables higher density end products ? Occupies just 33 of the board area o

文件：517.32 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g170p02/marking.html">G170P02；Package：DFN2X2-6L；P-Channel Enhancement Mode Power MOSFET

Description The G170P02D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：841.19 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g170p02d/marking.html">G170P02D；Package：DFN3X3-8LDual；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G170P02D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：727.81 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g170p03/marking.html">G170P03；Package：DFN3/3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G170P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：656.23 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g170p03/marking.html">G170P03；Package：DFN3/3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G170P03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：927.88 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g170p03/marking.html">G170P03；Package：SOP-8Dual；Dual P-Channel Enhancement Mode Power MOSFET

Description The G170P03S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：874.5 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g170p06/marking.html">G170P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：995.61 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g170p06/marking.html">G170P06；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0138 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體