絲?。?strong>G1K；Package：SOD-123FL；Surface Mount General Purpose Rectifier G1A Through G1M

FEATURES Low profile package Ideal for automated placement Glass passivated chip junction High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.71047 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

絲?。?strong>G1K；Package：SOT-23；NPN General purpose transistor

文件：1.3651 Mbytes 頁數(shù)：8 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/g1k1p06h/marking.html">G1K1P06H；Package：SOT-223；P-Channel Enhancement Mode Power MOSFET

Description The G1K1P06HH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：879.26 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g1k1p06/marking.html">G1K1P06；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

Description The G1K1P06LH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：826.32 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g1k1p06/marking.html">G1K1P06；Package：SOT-23-6；P-Channel Enhancement Mode Power MOSFET

Description The G1K1P06LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：796.76 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g1k1p10/marking.html">G1K1P10；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G1K1P10TE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：882.26 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g1k2c10d/marking.html">G1K2C10D；Package：SOP-8Dual；N and P Channel Enhancement Mode Power MOSFET

Description The G1K2C10S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.15149 Mbytes 頁數(shù)：10 Pages

GOFORD

谷峰半導(dǎo)體

絲印：G1K3N10；Package：SOT-89；N-Channel Enhancement Mode Power MOSFET

Description The G1K3N10G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：881.46 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g1k3n10/marking.html">G1K3N10；Package：SOT-23-6L；N-Channel Enhancement Mode Power MOSFET

Description The G1K3N10LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：946.34 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/g1k6p15/marking.html">G1K6P15；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G1K6P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：669.33 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體