| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>FQA9N90;Package:TO-3PN;N-Channel QFET? MOSFET 900 V, 8.6 A, 1.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval 文件:2.02511 Mbytes 頁數(shù):9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲印:FQA9N90C;Package:TO-3PN;N-Channel QFET? MOSFET 900 V, 9 A, 1.4 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval 文件:1.96537 Mbytes 頁數(shù):9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲印:FQA9N90;Package:TO-3PN;N-Channel QFET? MOSFET 900 V, 8.6 A, 1.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval 文件:2.02511 Mbytes 頁數(shù):9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/fqa9n90c/marking.html">FQA9N90C;Package:TO-3PN;N-Channel QFET? MOSFET 900 V, 9 A, 1.4 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval 文件:1.96537 Mbytes 頁數(shù):9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
FQA9N90 | 900V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand 文件:679.15 Kbytes 頁數(shù):8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
900V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig 文件:680.52 Kbytes 頁數(shù):8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·100 Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed swit 文件:342.14 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
FQA9N90 | 900V N-Channel MOSFET 文件:814.06 Kbytes 頁數(shù):8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
900V N-Channel MOSFET 文件:814.06 Kbytes 頁數(shù):8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
900V N-Channel MOSFET 文件:814.06 Kbytes 頁數(shù):8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
SMD |
23+ |
6000 |
專業(yè)配單原裝正品假一罰十 |
詢價 | ||
onsemi(安森美) |
25+ |
TO-3P |
22412 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
ON(安森美) |
2447 |
TO-263-3 |
115000 |
450個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
ON |
25+ |
TO-3P |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
ON |
24+ |
NA |
3000 |
進口原裝 假一罰十 現(xiàn)貨 |
詢價 | ||
ON/安森美 |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ON/安森美 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
ON/安森美 |
25+ |
SMD |
8880 |
原裝認準芯澤盛世! |
詢價 |
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