| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>FQU11P06；Package：I-PAK；P-Channel QFET? MOSFET -60 V, -9.4 A, 185 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件：1.33089 Mbytes 頁數：11 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?strong>FQU11P06；Package：I-PAK；P-Channel QFET? MOSFET -60 V, -9.4 A, 185 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件：1.33089 Mbytes 頁數：11 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
FQU11P06 | P-Channel QFET? MOSFET -60 V, -9.4 A, 185 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件：1.33089 Mbytes 頁數：11 Pages | ONSEMI 安森美半導體 | ONSEMI | |
FQU11P06 | isc P-Channel MOSFET Transistor FEATURES ·Drain Current –ID=-9.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.185Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for us 文件：377.67 Kbytes 頁數：2 Pages | ISC 無錫固電 | ISC | |
FQU11P06 | 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w 文件：615.94 Kbytes 頁數：9 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
FQU11P06 | P-Channel QFET? MOSFET -60 V, -9.4 A, 185 m廓 General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w 文件：1.18404 Mbytes 頁數：9 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
P-Channel QFET? MOSFET -60 V, -9.4 A, 185 m廓 General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w 文件：1.18404 Mbytes 頁數：9 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
FQU11P06 | P-Channel 60-V (D-S) MOSFET 文件：1.66632 Mbytes 頁數：7 Pages | VBSEMI 微碧半導體 | VBSEMI | |
60V P-Channel MOSFET 文件：856.8 Kbytes 頁數：9 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD |
詳細參數
- 型號：
FQU11P06
- 功能描述：
MOSFET 60V P-Channel QFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
IPAK-3 |
21000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
原廠 |
23+ |
TO-251 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
ONSemiconductor |
24+ |
NA |
3632 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
harris |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢 |
詢價 | ||
FAIRCHILD |
25+23+ |
TO251 |
11849 |
絕對原裝正品全新進口深圳現貨 |
詢價 | ||
三年內 |
1983 |
只做原裝正品 |
詢價 | ||||
FAIRCHILD |
20+ |
原裝 |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
I-PAKTO-251 |
24190 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
Fairchild |
1930+ |
N/A |
1314 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
ON(安森美) |
2447 |
12-UFBGA |
115000 |
5040個/管一級代理專營品牌!原裝正品,優(yōu)勢現貨,長 |
詢價 |
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