| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FQPF4N90C | 絲?。?strong>FQPF4N90C;Package:TO-220F;N-Channel QFET? MOSFET 900 V, 4.0 A, 4.2 ? Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi 文件:1.20959 Mbytes 頁數(shù):10 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
FQPF4N90C | 絲?。?strong>FQPF4N90C;Package:TO-220F;N-Channel QFET? MOSFET 900 V, 4.0 A, 4.2 ? Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi 文件:1.20959 Mbytes 頁數(shù):10 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
FQPF4N90C | Isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con 文件:307.99 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
FQPF4N90C | 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件:899.03 Kbytes 頁數(shù):10 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
FQPF4N90C | 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件:920.84 Kbytes 頁數(shù):10 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件:920.84 Kbytes 頁數(shù):10 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD |
詳細(xì)參數(shù)
- 型號:
FQPF4N90C
- 功能描述:
MOSFET 900V N-Ch Q-FET advance C-Series
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
NA |
7825 |
原裝正品!清倉處理! |
詢價 | ||
ON |
23+ |
N/A |
10000 |
正規(guī)渠道,只有原裝! |
詢價 | ||
FAIRCHILD/仙童 |
25+ |
TO-220F |
45000 |
FAIRCHILD/仙童全新現(xiàn)貨FQPF4N90C即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價 | ||
FSC |
24+ |
TO-220F |
5000 |
全新進(jìn)口原裝現(xiàn)貨,價優(yōu) |
詢價 | ||
FAIRCHILD |
TO-220 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
ON |
2020+ |
TO-220 |
22000 |
原裝正品,誠信經(jīng)營。 |
詢價 | ||
FAIRCHILD |
23+ |
TO-220F |
65400 |
詢價 | |||
ONSEMI |
25+ |
NA |
5 |
全新原裝!優(yōu)勢庫存熱賣中! |
詢價 | ||
ONSemi |
2140 |
TO-220FP |
25545 |
全新原裝公司現(xiàn)貨
|
詢價 | ||
ON |
23+ |
TO-220F |
32078 |
10年以上分銷商,原裝進(jìn)口件,服務(wù)型企業(yè) |
詢價 |
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