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          首頁 >絲印反查>FQU2N60C

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FQU2N60CTU

          絲?。?strong>FQU2N60C;Package:I-PAK;N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

          Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

          文件:979.34 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FQU2N60CTU

          絲印:FQU2N60C;Package:I-PAK;N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

          Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

          文件:979.34 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FQU2N60C

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID=1.9A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =4.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:331.03 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          FQU2N60C

          N-Channel QFET MOSFET

          Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductor?s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, an

          文件:842.74 Kbytes 頁數(shù):8 Pages

          KERSEMI

          FQU2N60C

          N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

          Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

          文件:979.34 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          FQU2N60C

          600V N-Channel MOSFET

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

          文件:617.97 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQU2N60C

          N-Channel QFET? MOSFET

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

          文件:748.29 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQU2N60CTU

          Low Gate Charge (Typ. 8.5 nC)

          Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

          文件:742.85 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQU2N60C

          600V N-Channel MOSFET

          文件:863.86 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQU2N60C

          600V N-Channel MOSFET

          文件:863.86 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          詳細參數(shù)

          • 型號:

            FQU2N60C

          • 功能描述:

            MOSFET 600V N-Channel Adv Q-FET C-Series

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號品牌批號封裝庫存備注價格
          FAIRCHILD/仙童
          25+
          TO-251
          45000
          FAIRCHILD/仙童全新現(xiàn)貨FQU2N60CTU即刻詢購立享優(yōu)惠#長期有排單訂
          詢價
          FAIRCHILD/仙童
          24+
          IPAK-3TO251
          3580
          原裝現(xiàn)貨/15年行業(yè)經(jīng)驗歡迎詢價
          詢價
          ON/安森美
          22+
          TO-251
          10080
          原裝正品
          詢價
          onsemi(安森美)
          25+
          TO-251-3
          21000
          正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
          詢價
          FAIRCHILD
          24+
          原廠原封
          6523
          進口原裝公司百分百現(xiàn)貨可出樣品
          詢價
          Fairchild
          24+
          NA
          5645
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
          詢價
          FAIRCHILD
          17+
          NA
          6200
          100%原裝正品現(xiàn)貨
          詢價
          ONSemiconductor
          24+
          NA
          3000
          進口原裝正品優(yōu)勢供應(yīng)
          詢價
          harris
          16+
          原廠封裝
          10000
          全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
          詢價
          FAIRCHILD
          25+23+
          TO251
          14362
          絕對原裝正品全新進口深圳現(xiàn)貨
          詢價
          更多FQU2N60C供應(yīng)商 更新時間2026-1-18 14:14:00
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