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          首頁 >絲印反查>FQD11P06

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FQD11P06TM

          絲印:FQD11P06;Package:D-PAK;P-Channel QFET? MOSFET -60 V, -9.4 A, 185 mΩ

          Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

          文件:1.33089 Mbytes 頁數(shù):11 Pages

          ONSEMI

          安森美半導(dǎo)體

          FQD11P06TM

          絲?。?strong>FQD11P06;Package:D-PAK;P-Channel QFET? MOSFET -60 V, -9.4 A, 185 mΩ

          Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

          文件:1.33089 Mbytes 頁數(shù):11 Pages

          ONSEMI

          安森美半導(dǎo)體

          FQD11P06

          60V P-Channel MOSFET

          General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

          文件:615.94 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD11P06

          P-Channel QFET? MOSFET -60 V, -9.4 A, 185 m廓

          General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

          文件:1.18404 Mbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD11P06

          P-Channel QFET? MOSFET -60 V, -9.4 A, 185 mΩ

          Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

          文件:1.33089 Mbytes 頁數(shù):11 Pages

          ONSEMI

          安森美半導(dǎo)體

          FQD11P06

          isc P-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID=-9.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.185Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for us

          文件:353.73 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          FQD11P06TM

          P-Channel QFET? MOSFET -60 V, -9.4 A, 185 m廓

          General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

          文件:1.18404 Mbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD11P06TM

          P-channel Enhancement Mode Power MOSFET

          Features ? VDS= -60V, ID= -20A RDS(ON)

          文件:912.3 Kbytes 頁數(shù):4 Pages

          BYCHIP

          百域芯

          FQD11P06_09

          60V P-Channel MOSFET

          文件:856.8 Kbytes 頁數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FQD11P06TM

          P-Channel 60-V (D-S) MOSFET

          文件:990.08 Kbytes 頁數(shù):8 Pages

          VBSEMI

          微碧半導(dǎo)體

          詳細(xì)參數(shù)

          • 型號:

            FQD11P06

          • 功能描述:

            MOSFET TO-252 DPAK P-CH 60V

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          FAIRCHILD/仙童
          25+
          TO-252
          154680
          明嘉萊只做原裝正品現(xiàn)貨
          詢價(jià)
          FAIRCHILD/仙童
          25+
          TO-252
          32000
          FAIRCHILD/仙童全新特價(jià)FQD11P06TM即刻詢購立享優(yōu)惠#長期有貨
          詢價(jià)
          Fairchild(飛兆/仙童)
          24+
          5590
          只做原裝現(xiàn)貨假一罰十!價(jià)格最低!只賣原裝現(xiàn)貨
          詢價(jià)
          ON(安森美)
          23+
          D-PAK
          9806
          公司只做原裝正品,假一賠十
          詢價(jià)
          ON
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢價(jià)
          ON/安森美
          23+
          25850
          新到現(xiàn)貨,只有原裝
          詢價(jià)
          FAIRCHILD
          2430+
          TO252
          8540
          只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
          詢價(jià)
          NK/南科功率
          2025+
          TO-252
          3100
          國產(chǎn)南科平替供應(yīng)大量
          詢價(jià)
          ON(安森美)
          25+
          D-PAK
          21000
          原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。
          詢價(jià)
          ON(安森美)
          25+
          D-PAK
          21000
          原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。
          詢價(jià)
          更多FQD11P06供應(yīng)商 更新時(shí)間2026-1-18 15:40:00
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