| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>FQD19N10；Package：TO-252；100V N -Channel MOSFET Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON) 文件：1.38344 Mbytes 頁(yè)數(shù)：5 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
絲?。?strong>FQD19N10；Package：TO-252；100V N -Channel MOSFET Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON) 文件：1.38344 Mbytes 頁(yè)數(shù)：5 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | ||
FQD19N10 | 100V N -Channel MOSFET Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON) 文件：1.38344 Mbytes 頁(yè)數(shù)：5 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | |
FQD19N10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：293.79 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | |
FQD19N10 | 100V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件：588.88 Kbytes 頁(yè)數(shù)：9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst 文件：623.02 Kbytes 頁(yè)數(shù)：9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：293.97 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
N-channel Enhancement Mode Power MOSFET Features ? VDS= 100V, ID= 18.1 A RDS(ON) 文件：1.60185 Mbytes 頁(yè)數(shù)：4 Pages | BYCHIP 百域芯 | BYCHIP | ||
N-channel Enhancement Mode Power MOSFET Features ? VDS= 100V, ID= 18.1 A RDS(ON) 文件：1.63316 Mbytes 頁(yè)數(shù)：4 Pages | BYCHIP 百域芯 | BYCHIP | ||
N-Channel QFET? MOSFET 100 V, 15.6 A, 100 m廓 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst 文件：1.34898 Mbytes 頁(yè)數(shù)：8 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD |
詳細(xì)參數(shù)
- 型號(hào)：
FQD19N10
- 功能描述：
MOSFET 100V N-Ch QFET Logic Level
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
25+ |
TO-252 |
35048 |
ON/安森美全新特價(jià)FQD19N10LTM即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢價(jià) | ||
FAIRCHILD |
SOT252 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價(jià) | |||
ONSEMI |
25+ |
NA |
2500 |
全新原裝!優(yōu)勢(shì)庫(kù)存熱賣中! |
詢價(jià) | ||
Fairchild(飛兆/仙童) |
24+ |
5628 |
只做原裝現(xiàn)貨假一罰十!價(jià)格最低!只賣原裝現(xiàn)貨 |
詢價(jià) | |||
ON(安森美) |
23+ |
D-PAK |
9476 |
公司只做原裝正品,假一賠十 |
詢價(jià) | ||
ON |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
ON(安森美) |
23+ |
25900 |
新到現(xiàn)貨,只有原裝 |
詢價(jià) | |||
ON/安森美 |
24+ |
TO-252 |
12500 |
原裝正品現(xiàn)貨,假一罰十 |
詢價(jià) | ||
NK/南科功率 |
2025+ |
TO-252-2 |
2500 |
國(guó)產(chǎn)南科平替供應(yīng)大量 |
詢價(jià) | ||
ON/安森美 |
2450+ |
TO-252 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) |
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