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          首頁(yè) >FDS6892>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          FDS6892

          Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

          General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

          文件:80.1 Kbytes 頁(yè)數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS6892

          Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

          General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

          文件:78.83 Kbytes 頁(yè)數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS6892

          Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

          ONSEMI

          安森美半導(dǎo)體

          FDS6892A

          絲印:FDS6892A;Dual N-Channel Logic Level PWM Optimized PowerTrench? MOSFET

          General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

          文件:180.75 Kbytes 頁(yè)數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS6892A

          Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

          General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

          文件:80.1 Kbytes 頁(yè)數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS6892A..

          Dual N-Channel Logic Level PWM Optimized PowerTrench? MOSFET

          General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

          文件:180.75 Kbytes 頁(yè)數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          FDS6892AZ

          Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

          General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

          文件:78.83 Kbytes 頁(yè)數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FDS6892A

          雙N溝道邏輯電平PWM優(yōu)化PowerTrench? MOSFET

          這些N溝道邏輯電平MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn),這一先進(jìn)工藝是專(zhuān)為最大限度地降低通態(tài)電阻并保持卓越開(kāi)關(guān)性能而定制的。 這些器件非常適合需要線路內(nèi)低功率損耗和快速開(kāi)關(guān)的低電壓和電池供電應(yīng)用。 ?7.5 A, 20 V\n?RDS(ON) = 18 mΩ @ VGS = 4.5 V\n?RDS(ON) = 24 mΩ @ VGS = 2.5 V\n?低柵極電荷\n?高性能溝道技術(shù)可實(shí)現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

          ONSEMI

          安森美半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Dual

          • V(BR)DSS Min (V):

            20

          • VGS Max (V):

            12

          • VGS(th) Max (V):

            1.5

          • ID Max (A):

            7.5

          • PD Max (W):

            2

          • RDS(on) Max @ VGS = 2.5 V(mΩ):

            Q1=Q2=24

          • RDS(on) Max @ VGS = 4.5 V(mΩ):

            Q1=Q2=18

          • Qg Typ @ VGS = 4.5 V (nC):

            16

          • Qg Typ @ VGS = 10 V (nC):

            12

          • Ciss Typ (pF):

            1333

          • Package Type:

            SOIC-8

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          更多FDS6892供應(yīng)商 更新時(shí)間2026-1-18 14:10:00
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