30V N-Channel MOSFET

Features ? Low gate charge (47nC typical). ? Fast switching speed. ?High performance trench technology for extremely low RDS(ON) ? High power and current handling capability. (VGS = 4.5V) VDS (V) =30V ID = 15 A RDS(ON)

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UMW

友臺半導(dǎo)體

絲?。?strong>FDS6570；Package：SOP-8；30V N-Channel MOSFET

Features ? Low gate charge (47nC typical). ? Fast switching speed. ?High performance trench technology for extremely low RDS(ON) ? High power and current handling capability. (VGS = 4.5V) VDS (V) =30V ID = 15 A RDS(ON)

文件：393.9 Kbytes 頁數(shù)：6 Pages

UMW

友臺半導(dǎo)體

Single N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

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FAIRCHILD

仙童半導(dǎo)體

單 N 溝道，2.5V 指定，PowerTrench? MOSFET，20V，15A，7.5mΩ

此N溝道2.5V額定MOSFET采用飛兆半導(dǎo)體先進(jìn)的PowerTrench工藝生產(chǎn)，這一先進(jìn)工藝是專為最大限度地降低通態(tài)電阻并保持卓越開關(guān)性能而定制的。 這些器件非常適合需要線路內(nèi)低功率損耗和快速開關(guān)的低電壓和電池供電應(yīng)用。 ?15 A，20 V\n?低柵極電荷（典型值47nC）\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?高功率和高電流處理能力;

ONSEMI

安森美半導(dǎo)體