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    首頁(yè) >FDP>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    FDP6690

    30V N-Channel PowerTrench SyncFET

    General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky di

    文件:88.46 Kbytes 頁(yè)數(shù):5 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP6690S

    30V N-Channel PowerTrench SyncFET

    General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky di

    文件:88.46 Kbytes 頁(yè)數(shù):5 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP6690S

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =15.5m Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

    文件:333.03 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    FDP6N60ZU

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2 Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

    文件:332.78 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    FDP7030

    N-Channel Logic Level PowerTrenchTM MOSFET

    General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

    文件:112.6 Kbytes 頁(yè)數(shù):5 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP7030BL

    N-Channel Logic Level PowerTrenchTM MOSFET

    General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

    文件:112.6 Kbytes 頁(yè)數(shù):5 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP7030BL

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =9 mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

    文件:333.4 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    FDP7030BLS

    30V N-Channel PowerTrench?SyncFET?

    General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottk

    文件:82.84 Kbytes 頁(yè)數(shù):6 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP7030L

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7 mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

    文件:332.5 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    FDP7042L

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

    文件:333.38 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    技術(shù)參數(shù)

    • Pb-free:

      Pb

    • Halide free:

      H

    • Status:

      Active

    • Channel Polarity:

      N-Channel

    • V(BR)DSS Min (V):

      60

    • VGS Max (V):

      ±20

    • VGS(th) Max (V):

      4.5

    • ID Max (A):

      313

    • PD Max (W):

      333

    • RDS(on) Max @ VGS = 4.5 V(mΩ):

      2

    • RDS(on) Max @ VGS = 10 V(mΩ):

      2

    • Qg Typ @ VGS = 10 V (nC):

      206

    • Ciss Typ (pF):

      16100

    • Package Type:

      TO-220-3

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    更多FDP供應(yīng)商 更新時(shí)間2026-1-22 18:01:00

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