N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =9 mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

無錫固電

30V N-Channel PowerTrench?SyncFET?

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottk

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FAIRCHILD

仙童半導(dǎo)體

N 溝道邏輯電平 PowerTrench? MOSFET 30V，60A，9mΩ

此N溝道邏輯電平MOSFET已經(jīng)過專門設(shè)計，采用同步或常規(guī)的開關(guān)PWM控制器提高DC/DC轉(zhuǎn)換器的整體效率。 比其他具有可比RDS(ON)規(guī)格的MOSFET相比，這些MOSFET擁有更快的開關(guān)速度和更低的柵極電荷。 因此，這是一款更易于驅(qū)動且更安全（在高頻段也是如此）的MOSFET，可實現(xiàn)具有更高總效率的DC/DC電源設(shè)計。 已針對低柵極電荷、低rDS(ON) 和高速開關(guān)進行了優(yōu)化。 ?60 A，30 V\n?RDS(ON) = 9 mΩ @ VGS = 10 V\n?RDS(ON) = 12 mΩ @ VGS = 4.5 V\n?在高溫下指定的臨界DC電氣參數(shù)\n?高性能溝道技術(shù)可實現(xiàn)極低的rDS(on)\n?175°C最大結(jié)溫額定值;

ONSEMI

安森美半導(dǎo)體