isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.8mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.77 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.7mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：355.18 Kbytes 頁數(shù)：3 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：355.27 Kbytes 頁數(shù)：3 Pages

ISC

無錫固電

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features ■ rDS(ON)

文件：231.85 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

100 V N-Channel MOSFET

Features (VGS = 10V) VDS (V) =100V ID = 76 A RDS(ON)

文件：822.39 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/8d5n10c/marking.html">8D5N10C；Package：TO-220；100 V N-Channel MOSFET

Features (VGS = 10V) VDS (V) =100V ID = 76 A RDS(ON)

文件：822.39 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導(dǎo)體

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fdp8n50nz/marking.html">FDP8N50NZ；Package：TO-220；N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m?

Features ? RDS(on) = 770 m? (Typ.) @ VGS = 10 V, ID = 4 A ? Low Gate Charge (Typ. 14 nC) ? Low Crss (Typ. 5 pF) ? 100 Avalanche Tested ? Improve dv/dt Capability ? ESD Improved Capability ? RoHS Compliant Applications ? LCD/LED TV ? Uninterruptible Power Supply ? Lighting ? AC-DC Power

文件：882.62 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：333.31 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.69 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電