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    首頁 >FDP>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    FDP6030

    N-Channel Logic Level PowerTrench MOSFET

    General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

    文件:401.43 Kbytes 頁數(shù):10 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP6030BL

    N-Channel Logic Level PowerTrench MOSFET

    General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

    文件:401.43 Kbytes 頁數(shù):10 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP6030BL

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

    文件:333.06 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    FDP6030L

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID= 52A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

    文件:332.57 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    FDP6030L

    N-Channel Logic Level Enhancement Mode Field Effect Transistor

    General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

    文件:473.58 Kbytes 頁數(shù):4 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP6035AL

    N-Channel Logic Level PowerTrenchTM MOSFET

    General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comp

    文件:93.09 Kbytes 頁數(shù):5 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP6035AL

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID=48A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) =12mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

    文件:333.4 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    FDP6035L

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID=58A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

    文件:333.38 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    FDP6035L

    N-Channel Logic Level Enhancement Mode Field Effect Transistor

    General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

    文件:413.48 Kbytes 頁數(shù):4 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP603AL

    N-Channel Logic Level Enhancement Mode Field Effect Transistor

    General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

    文件:414.53 Kbytes 頁數(shù):4 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    技術(shù)參數(shù)

    • Pb-free:

      Pb

    • Halide free:

      H

    • Status:

      Active

    • Channel Polarity:

      N-Channel

    • V(BR)DSS Min (V):

      60

    • VGS Max (V):

      ±20

    • VGS(th) Max (V):

      4.5

    • ID Max (A):

      313

    • PD Max (W):

      333

    • RDS(on) Max @ VGS = 4.5 V(mΩ):

      2

    • RDS(on) Max @ VGS = 10 V(mΩ):

      2

    • Qg Typ @ VGS = 10 V (nC):

      206

    • Ciss Typ (pF):

      16100

    • Package Type:

      TO-220-3

    供應(yīng)商型號品牌批號封裝庫存備注價格
    FAIRCHILD
    1716+
    TO-220F
    8500
    只做原裝進(jìn)口,假一罰十
    詢價
    FSC
    24+
    TO220
    1068
    原裝現(xiàn)貨假一罰十
    詢價
    FSC
    2023+
    3000
    進(jìn)口原裝現(xiàn)貨
    詢價
    FSC
    241
    TO-220
    44
    特價銷售歡迎來電!!
    詢價
    FAIRCHIL
    25+
    TO-220
    2650
    原裝優(yōu)勢!絕對公司現(xiàn)貨
    詢價
    FAIRCHILD/仙童
    2022+
    4000
    全新原裝 貨期兩周
    詢價
    FSC
    16+
    TO-220
    10000
    全新原裝現(xiàn)貨
    詢價
    ON(安森美)
    23+
    TO-220
    19333
    公司只做原裝正品,假一賠十
    詢價
    FAIRCHILD/仙童
    2026+
    TO-220F
    29984
    進(jìn)口管盒現(xiàn)貨/50/1K
    詢價
    FAIRCHI
    24+
    TO220
    64580
    原裝現(xiàn)貨假一賠十
    詢價
    更多FDP供應(yīng)商 更新時間2026-1-22 15:09:00

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