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    首頁(yè) >FDP>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    FDP603AL

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID=33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

    文件:332.38 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    FDP61N20

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID=61A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =41mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

    文件:332.25 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    FDP61N20

    DESIGN/PROCESS CHANGE NOTIFICATION

    Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

    文件:298.83 Kbytes 頁(yè)數(shù):14 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP65N06

    60V N-Channel MOSFET

    Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

    文件:598.45 Kbytes 頁(yè)數(shù):8 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP65N06

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID=65A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

    文件:332.41 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    FDP6644

    30V N-Channel PowerTrench MOSFET

    General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features ? 50 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @

    文件:80.46 Kbytes 頁(yè)數(shù):5 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP6644

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

    文件:332.8 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    FDP6644S

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

    文件:332.8 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    FDP6644S

    30V N-Channel PowerTrench SyncFET?

    General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6644S includes an integrated Schottky di

    文件:160.47 Kbytes 頁(yè)數(shù):6 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    FDP6670AL

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

    文件:332.99 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

    技術(shù)參數(shù)

    • Pb-free:

      Pb

    • Halide free:

      H

    • Status:

      Active

    • Channel Polarity:

      N-Channel

    • V(BR)DSS Min (V):

      60

    • VGS Max (V):

      ±20

    • VGS(th) Max (V):

      4.5

    • ID Max (A):

      313

    • PD Max (W):

      333

    • RDS(on) Max @ VGS = 4.5 V(mΩ):

      2

    • RDS(on) Max @ VGS = 10 V(mΩ):

      2

    • Qg Typ @ VGS = 10 V (nC):

      206

    • Ciss Typ (pF):

      16100

    • Package Type:

      TO-220-3

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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    8500
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    FSC
    24+
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    1068
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    13+
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    1342
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    2650
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    2023+
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    24+
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    64580
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    2022+
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    全新原裝 貨期兩周
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    2026+
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    更多FDP供應(yīng)商 更新時(shí)間2026-1-22 9:09:00

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