isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 61A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.91 Kbytes 頁數(shù)：2 Pages

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N-Channel PowerTrench MOSFET 105V, 41A, 33m?

Features ? rDS(ON) = 25m? (Typ.), VGS = 10V, ID = 41A ? Qg(tot) = 28nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? Optimized efficiency at high frequencies ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/DC converters and Off

文件：237.32 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

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N-Channel PowerTrench MOSFET 100V, 32A, 36m?

Features ? rDS(ON) = 32m? (Typ.), VGS = 10V, ID = 32A ? Qg(tot) = 18.5nC (Typ.), VGS = 10V ? Low Miller Charge ? Low QRR Body Diode ? UIS Capability (Single Pulse and Repetitive Pulse) ? Qualified to AEC Q101 Applications ? DC/DC converters and Off-Line UPS ? Distributed Power Architectur

文件：278.66 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

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STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY

GENERALDESCRIPTION The TK2150 (TC2001/TP2150 chipset) is a two-channel, 200W(6?) per channel Amplifier Driver that uses Tripath’s proprietary Digital Power Processing (DPP? )technology. Class-T amplifiers offer both the audio fidelity of Class-AB and the power efficiency of Class-D amplifiers. F

文件：666.21 Kbytes 頁數(shù)：34 Pages

TRIPATH

200V N-Channel MOSFET

Description UniFETTM MOSFET is Fairchild Semiconductor?’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

文件：908.49 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

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DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?II MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 頁數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC

文件：213.32 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

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P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC

文件：213.32 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -16A@ TC=25℃ ·Drain Source Voltage- : VDSS= -20V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.08Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：326.34 Kbytes 頁數(shù)：2 Pages

ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=20A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：329.25 Kbytes 頁數(shù)：2 Pages

ISC

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