N-Channel PowerTrench? MOSFET 30 V, 6.9 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

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N-Channel PowerTrench? MOSFET 30 V, 7.5 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast s

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N-Channel PowerTrench? MOSFET 30 V, 8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

文件：340.18 Kbytes 頁數(shù)：7 Pages

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N-Channel PowerTrench? MOSFET 30 V, 175 A, 1.8 mΩ

Features Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery MSL1 Robust Package Design 100

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N-Channel Enhancement MOSFET

Application o Load switch ? High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate ? DCIDC Power Supplies

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TECHPUBLIC

臺(tái)舟電子

DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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N-Channel Dual CoolTM Power Trench? MOSFET 100 V, 60 A, 7.5 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：291.45 Kbytes 頁數(shù)：8 Pages

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仙童半導(dǎo)體

DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 頁數(shù)：2 Pages

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仙童半導(dǎo)體

類型：N溝道 漏源電壓(Vdss)：100V 連續(xù)漏極電流(Id)：12.4A 功率(Pd)：2.5W 導(dǎo)通電阻(RDS(on)@Vgs,Id)：8mΩ@10V,13A N 溝道，PowerTrench MOSFET，100V，60A，8mΩ 此 N 溝道 MOSFET 是使用先進(jìn)的 PowerTrench 工藝生產(chǎn)的，特別適用于最大程度降低導(dǎo)通電阻，同時(shí)保持卓越的

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安森美半導(dǎo)體

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