N-Channel Dual CoolTM Power Trench? MOSFET 100 V, 60 A, 7.5 m廓

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

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FAIRCHILD

仙童半導體

DUAL COOL??PACKAGE POWERTRENCH? MOSFETs

Dual Cool? packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ?exibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

文件：1.16337 Mbytes 頁數：2 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Primary DC-DC MOSFET ·Secondary Synchronous Rectifier ·Load Switch

文件：294.76 Kbytes 頁數：2 Pages

ISC

無錫固電

N 溝道，雙 CoolTM 56 PowerTrench? MOSFET，100V，60A，7.5mΩ

此 N 溝道 MOSFET 采用飛兆半導體先進的 Power Trench?工藝生產，該工藝融入了柵極屏蔽技術。先進的硅技術和 Dual Cool? 封裝技術完美融合，可在提供最小 rDS(on)的同時通過極低的結至環(huán)境熱阻保持卓越的開關性能。 ?柵極屏蔽 MOSFET 技術\n?Dual Cool?頂側冷卻PQFN封裝\n?VGS = 10 V，ID = 14.5 A時，Max rDS(on) = 7.5 mΩ\n?VGS = 6 V，ID = 11.5 A時，最大rDS(on) = 12mΩ\n?通態(tài)電阻 rDS(on)極低的高性能技術\n?100% 經過 UIL 測試\n?符合 RoHS 標準;

ONSEMI

安森美半導體