N-Channel PowerTrench? MOSFET 30 V, 7.5 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast s

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N 溝道，PowerTrench? MOSFET，30V，7.5mΩ

此N溝道MOSFET使用同步或傳統(tǒng)的開關(guān)PWM控制器，專為提高DC/DC轉(zhuǎn)換器的整體效率并最大限度降低其開關(guān)節(jié)點(diǎn)振鈴噪聲而設(shè)計(jì)。 已經(jīng)針對(duì)低柵極電荷、低rDS(on)、快速開關(guān)速度和軟體二極管反向恢復(fù)性能進(jìn)行了優(yōu)化。 ?VGS = 10 V，ID = 13 A時(shí)，最大rDS(on) = 7.5 mΩ\n?VGS = 4.5 V，ID = 4 A時(shí)，最大rDS(on) = 13 mΩ\n?先進(jìn)的封裝和硅技術(shù)完美融合，實(shí)現(xiàn)了低rDS(on)和高效率\n?下一代先進(jìn)體二極管技術(shù)，專為軟恢復(fù)設(shè)計(jì)\n?MSL1耐用封裝設(shè)計(jì)\n?100%經(jīng)過UIL測(cè)試\n?符合RoHS標(biāo)準(zhǔn);

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N-Channel PowerTrench? MOSFET 30 V, 8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

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N-Channel PowerTrench? MOSFET 30 V, 7.5 m廓

文件：281.55 Kbytes 頁(yè)數(shù)：7 Pages

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仙童半導(dǎo)體

30V N溝道PowerTrench? MOSFET

此N溝道MOSFET使用同步或傳統(tǒng)的開關(guān)PWM控制器，專為提高DC/DC轉(zhuǎn)換器的整體效率并最大限度降低其開關(guān)節(jié)點(diǎn)振鈴噪聲而設(shè)計(jì)。 已經(jīng)針對(duì)低柵極電荷、低rDS(on)、快速開關(guān)速度和軟體二極管反向恢復(fù)性能進(jìn)行了優(yōu)化。 ?VGS = 10 V，ID = 13 A時(shí)，rDS(on) = 8 mΩ（最大值）\n?VGS = 4.5 V，ID = 10 A時(shí)，最大rDS(on) = 14 mΩ\n?先進(jìn)的封裝和硅技術(shù)完美融合，實(shí)現(xiàn)了低rDS(on)和高效率\n?下一代先進(jìn)體二極管技術(shù)，專為軟恢復(fù)設(shè)計(jì)\n?MSL1耐用封裝設(shè)計(jì)\n?100%經(jīng)過UIL測(cè)試\n?符合RoHS標(biāo)準(zhǔn);

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安森美半導(dǎo)體