N-Channel PowerTrench? MOSFET 30 V, 175 A, 1.8 mΩ

Features Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery MSL1 Robust Package Design 100

文件：433.96 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

N-Channel PowerTrench? MOSFET 30 V, 120 A, 1.8 m廓

文件：318.49 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

30V N溝道PowerTrench? MOSFET

此N溝道MOSFET使用同步或傳統(tǒng)的開關(guān)PWM控制器，專為提高DC/DC轉(zhuǎn)換器的整體效率并最大限度降低其開關(guān)節(jié)點(diǎn)振鈴噪聲而設(shè)計(jì)。 它已針對低柵極電荷、低rDS(on)、快速開關(guān)速度和體二極管反向恢復(fù)性能進(jìn)行了優(yōu)化。 ?VGS = -10 V，ID = -30 A時，最大值rDS(on) = 1.8 m? \n?VGS = 4.5 V且ID = 26 A時，最大rDS(on) = 2.4 m? \n?先進(jìn)的封裝和硅技術(shù)完美融合，實(shí)現(xiàn)了低rDS(on)和高效率\n?新一代的增強(qiáng)型體二極管技術(shù)，專為軟恢復(fù)而設(shè)計(jì)\n?MSL1耐用封裝設(shè)計(jì)\n?100%經(jīng)過UIL測試\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

N-Channel Enhancement MOSFET

Application o Load switch ? High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate ? DCIDC Power Supplies

文件：2.6273 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子