N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：473.58 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=48A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =13mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：329.15 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel PowerTrenchTM MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

文件：107.97 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features · 12 A, 30 V RDS(ON)= 1

文件：169.53 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel PowerTrenchTM MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(O

文件：107.97 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體