8 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs

文件：977.85 Kbytes 頁數(shù)：9 Pages

WOLFSPEED

8 W, 6.0 GHz, GaN HEMT Die

文件：528.52 Kbytes 頁數(shù)：8 Pages

CREE

科銳

8 W; 6.0 GHz; GaN HEMT Die

The CGH60008D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density ·8 W Typical PSAT @ 28 V Operation\n·5 W Typical PSAT @ 20 V Operation\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 6 GHz Operation\n·High Efficiency;

MACOM

Package：模具；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 28V DIE

WOLFSPEED