COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS

This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Complim

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PANJIT

強茂

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capaci

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DIODES

美臺半導(dǎo)體

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) ? Green Device (Note 4) ? Qualified to AEC-Q101 Standards for High Reliability

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DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/vs/marking.html">VS；Package：TO-236AB；50 V, 180 mA P-channel Trench MOSFET

1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD

文件：1.42503 Mbytes 頁數(shù)：16 Pages

NEXPERIA

安世

P-Channel Mosfet

Application ? Battery protection ? Load switch ? Power management

文件：1.38094 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

P-Channel Power MOSFET

Application Reverse Battery protection ? Load switch o Power management PWM Application

文件：2.37218 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

絲印：B9；Package：DFN1110D-3；50 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Side wettable flanks for optical

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NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/vy/marking.html">VY；Package：TSSOP6；50 V, 160 mA dual P-channel Trench MOSFET

1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 1 kV AEC-Q1

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NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/z6/marking.html">Z6；Package：SOT416；50 V, 150 mA P-channel Trench MOSFET

1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pro

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NEXPERIA

安世

絲印：EG；Package：SOT666；50 V, 170 mA dual P-channel Trench MOSFET

1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET tec

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NEXPERIA

安世