50 V, 170 mA dual P-channel Trench MOSFET

General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protection

文件：876.17 Kbytes 頁數(shù)：17 Pages

恩XP

絲印：VT；Package：SC-70；50 V, 150 mA P-channel Trench MOSFET

1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pro

文件：1.42602 Mbytes 頁數(shù)：16 Pages

NEXPERIA

安世

P-Channel Enhancement Mode Field Effect Transistor

Application ? Load/Power Switching ? Interfacing Switching ? Logic Level Shift

文件：1.48655 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

POWER MOSFET P-CHANNEL 130mA, 50V

DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are DC DC converters, load switching, power management in portable and battery powered products such as computers,

文件：785.18 Kbytes 頁數(shù)：6 Pages

AITSEMI

創(chuàng)瑞科技

絲?。?a target="_blank" title="Marking" href="/zv/marking.html">ZV；Package：SOT23；P-channel enhancement mode vertical DMOS transistor

1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS) transistor in a small Surface-Mounted Device (SMD) plastic package. [1] /DG: halogen-free 1.2 Features 1.3 Applications Table 1. Product overview Type number[1] Package 恩XP JEDEC BSS84 S

文件：192.2 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Resistance ● Available in lead-free plating (100 matte tin fi

文件：111.8 Kbytes 頁數(shù)：4 Pages

PANJIT

強(qiáng)茂

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capaci

文件：48 Kbytes 頁數(shù)：2 Pages

DIODES

美臺半導(dǎo)體

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Lead Free/RoHS Compliant (Note 3) ? Green Device (Note 5 and 6)

文件：200.33 Kbytes 頁數(shù)：3 Pages

DIODES

美臺半導(dǎo)體

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Lead Free/RoHS Compliant (Note 3) ? Green Device (Note 5 and 6)

文件：200.33 Kbytes 頁數(shù)：3 Pages

DIODES

美臺半導(dǎo)體

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Lead Free/RoHS Compliant (Note 3) ? Green Device (Note 5 and 6)

文件：200.33 Kbytes 頁數(shù)：3 Pages

DIODES

美臺半導(dǎo)體