SOT-23 Field Effect Transistors

SOT-23 Field Effect Transistors P-Channel Enhancement-Mode MOS FETs

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GSME

桂微

P-CHANNEL MOSFET

P-CHANNEL MOSFET DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE ● Energy Efficient ● Low Threshold Voltage ● High-speed Switching ● Miniature Surface Mount Package Saves Board

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JIANGSU

長電科技

絲印：W；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

P-Channel Enhancement Mode Power MOSFET These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered produc

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LEIDITECH

雷卯電子

P-CHANNEL ENHANCEMENT MODE MOSFET

This is a P-channel, enhancement-mode MOSFET, housed in the industry standard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. FEATURES Low On-Resistance Available in lead-free plating (100 matte tin finish) Low Gate Threshold Voltage

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PANJIT

強茂

SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

SIPMOS? Small-Signal Transistor ? P channel ? Enhancement mode ? Logic Level ? VGS(th) = -0.8...-2.0 V

文件：73.15 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子

絲印：B84；Package：SOT-23；MOSFET(P-Channel)

Features Energy Efficient Low Threshold Voltage High-speed Switching. DC/DC Converter.

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SY

順燁電子

P-Channel Enhancement Mode MOSFET

■ Features ● VDS (V) = -50V ● ID = -0.13 A ● RDS(ON) ≤ 10Ω (VGS = -5V)

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TGS

絲?。?a target="_blank" title="Marking" href="/b84/marking.html">B84；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS -60 V ● ID -0.17 A ● RDS(ON)( at VGS=-10V)

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YANGJIE

揚杰電子

Energy Efficient

SOT-23 Plastic-Encapsulate MOSFETs DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE ● Energy Efficient ● Low Threshold Voltage ● High-speed Switching ● Miniature Surface Mount P

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DGNJDZ

南晶電子

P-Channel Enhancement Mode MOSFET

Feature ● -50V/-0.13A, RDS(ON) =10Ω (MAX) @VGS = -5V, Ids=-0.1A ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applications ● Power Management Portable Equipment and Battery Powered Systems.

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ZPSEMIZP Semiconductor

至尚臻品