DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS84DWQ is suitable for automotive applications requiring specific change control;

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DIODES

美臺(tái)半導(dǎo)體

絲印：K84；Package：SOT363；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS84DWQ is suitable for automotive applications requiring specific change control;

文件：584.25 Kbytes 頁(yè)數(shù)：5 Pages

DIODES

美臺(tái)半導(dǎo)體

絲印：K84；Package：SOT363；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS84DWQ is suitable for automotive applications requiring specific change control;

文件：584.25 Kbytes 頁(yè)數(shù)：5 Pages

DIODES

美臺(tái)半導(dǎo)體

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Resistance ● Available in lead-free plating (100 matte tin fi

文件：111.8 Kbytes 頁(yè)數(shù)：4 Pages

PANJIT

強(qiáng)茂

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Resistance ● Available in lead-free plating (100 matte tin fi

文件：111.8 Kbytes 頁(yè)數(shù)：4 Pages

PANJIT

強(qiáng)茂

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Resistance ● Available in lead-free plating (100% matte t

文件：111.8 Kbytes 頁(yè)數(shù)：4 Pages

PANJIT

強(qiáng)茂

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Resistance ● Available in lead-free plating (100% matte t

文件：111.8 Kbytes 頁(yè)數(shù)：4 Pages

PANJIT

強(qiáng)茂

MOSFET Single, P-Ch

Features ? Low on-resistance ? High-speed switching ? Drive circuits can be simple ? Parallel use is easy ? ESD protected gate up to 2KV HBM Typical Applications ? P-channel enhancement mode effect transistor ? Switching application Description MOSFET, Single, P-Channel, Enhancement

文件：576.43 Kbytes 頁(yè)數(shù)：5 Pages

MULTICOMP

易絡(luò)盟

絲?。?a target="_blank" title="Marking" href="/b84./marking.html">B84.；Package：SOT-23；P-Channel MOSFET

Features - VDS(V) = -50V - ID = -130mA - RDS(ON)

文件：498.01 Kbytes 頁(yè)數(shù)：5 Pages

COMCHIP

典琦

絲印：VR；Package：SOT-23；Pch -60V -0.23A Small Signal MOSFET

lFeatures 1) Trench MOSFET technology 2) Very fast switching 3) 4.5V Drive 4) AEC-Q101 qualified lApplication Switching circuits High-side loadswitch Relay driver

文件：3.08852 Mbytes 頁(yè)數(shù)：14 Pages

ROHM

羅姆