絲印：SP；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching

文件：139.12 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/sp/marking.html">SP；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching

文件：285.09 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT23 SMD package. FEATURES ? Low threshold voltage ? Direct interface to C-MOS, TTL, etc. ? High-speed switching ? No secondary breakdown. APPLICATIONS ? Line current interrupter in telephone sets ? Relay, high speed a

文件：89.64 Kbytes 頁數(shù)：12 Pages

PHI

PHI

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Feature ● -50V, -0.13A, RDS(ON) =10Ω @VGS = -10V ● High dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件：468.67 Kbytes 頁數(shù)：5 Pages

CET

華瑞

絲?。?a target="_blank" title="Marking" href="/c84/marking.html">C84；Package：SOT-23；P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capaci

文件：48.78 Kbytes 頁數(shù)：2 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/c84/marking.html">C84；Package：SOT-23；P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) ? Green Device (Note 4) ? Qualified to AEC-Q101 Standards for High Reliability

文件：106.69 Kbytes 頁數(shù)：4 Pages

DIODES

美臺(tái)半導(dǎo)體

P-Channel Enhancement Mode Field Effect Transistor

Features ? High dense cell design for extremely low RDS(ON) ? Rugged and reliable ? Lead free product is acquired ? SOT-23 Package ? Marking Code: B84 ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1

文件：807.97 Kbytes 頁數(shù)：4 Pages

MCC

P-Channel Power MOSFET

FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Low Side Load Switching ● Level Shift Circuits ● General Switch Circuits

文件：397.61 Kbytes 頁數(shù)：6 Pages

TSC

臺(tái)灣半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/13/marking.html">13*；Package：SOT-23；P-channel enhancement mode vertical DMOS transistor

General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS) transistor in a small Surface-Mounted Device (SMD) plastic package. Features ■ Low threshold voltage ■ High-speed switching ■ Direct interface to CMOS and Transistor-Transistor Logic (TTL)

文件：70.46 Kbytes 頁數(shù)：11 Pages

恩XP

Small Signal MOSFET P-Channel

Features: * Low On-Resistance : 10Ω * Low Input Capacitance: 30PF * Low Out put Capacitance : 10PF * Low Threshole : 2.0V * Fast Switching Speed : 2.5ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.

文件：127.85 Kbytes 頁數(shù)：4 Pages

WEITRON