絲印：A4；Package：SOT-343R；NPN SiGe wideband transistor

DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES ? Very high power gain ? Very low noise figure ? High transition frequency ? Emitter is thermal lead ? Low feedback capacitance ? 45 GHz SiGe process. APPLICATI

文件：102.72 Kbytes 頁數(shù)：16 Pages

PHI

PHI

NPN SiGe wideband transistor

恩XP

A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs

Description The BGA430 is a broad band high gain amplifier based upon Infineon Technologies’ Silicon Bipolar Technology B6HF. Housed in a small SOT363 package this Silicon Monolithic Microwave Integrated Circuit (MMIC) requires very few external components due to the integrated biasing concept.

文件：724.48 Kbytes 頁數(shù)：24 Pages

INFINEON

英飛凌

Active Biased RF Transistor

Description SIEGET?-45 NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10*IBias. Features ? Gms= 18dB at 1.8GHz ? Small SOT343 package ? Current easy adjustable by an external resistor ? Open collector outpu

文件：129.669 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

BGB540 as a 1.85 GHz Low Noise Amplifier

BGB540 as a 1.85 GHz Low Noise Amplifier

文件：118.32 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌