絲?。?a target="_blank" title="Marking" href="/hw/marking.html">HW*；Package：SOT23；NPN wideband silicon RF transistor

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恩XP

NPN wideband silicon RF transistor

文件：300.06 Kbytes 頁數(shù)：22 Pages

PHI

PHI

NPN寬帶硅RF晶體管

NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23package.\nThe BFU550A is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz. Low noise, high breakdown RF transistor\nAEC-Q101 qualified\nMinimum noise figure (NFmin) = 0.6 dB at 900 MHz\nMaximum stable gain 18 dB at 900 MHz\n11 GHz fT silicon technology;

恩XP

NPN Wideband Silicon RF Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min.) · Low Noise, High Breakdown RF Transistor APPLICATIONS · Applications Requiring High Supply Voltages And High Breakdown Voltages · Low Noise Amplifiers For ISM Applications

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ISC

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