RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

NPN wideband silicon RF transistor

文件：116.04 Kbytes 頁數(shù)：12 Pages

PHI

PHI

NPN wideband silicon RF transistor

文件：138.31 Kbytes 頁數(shù)：12 Pages

PHI

PHI

NPN寬帶硅RF晶體管

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. Low noise high linearity microwave transistor\nHigh output third-order intercept point 34 dBm at 1.8 GHz\n40 GHz fT silicon technology;

恩XP