絲?。?a target="_blank" title="Marking" href="/tc/marking.html">TC；Package：SOT143B；NPN wideband silicon RF transistor

General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. Features and benefits ? Low noise,

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恩XP

NPN寬帶硅RF晶體管

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pindual-emitter SOT143B package.\nThe BFU550 is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz. Low noise, high breakdown RF transistor\nAEC-Q101 qualified\nMinimum noise figure (NFmin) = 0.7 dB at 900 MHz\nMaximum stable gain 21 dB at 900 MHz\n11 GHz fT silicon technology;

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NPN Wideband Silicon RF Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min.) · Low Noise, High Breakdown RF Transistor APPLICATIONS · Applications Requiring High Supply Voltages And High Breakdown Voltages · Low Noise Amplifiers For ISM Applications

文件：232.24 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

NPN wideband silicon RF transistor

文件：306.25 Kbytes 頁(yè)數(shù)：22 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/hw/marking.html">HW*；Package：SOT23；NPN wideband silicon RF transistor

文件：300.06 Kbytes 頁(yè)數(shù)：22 Pages

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NPN wideband silicon RF transistor

文件：300.06 Kbytes 頁(yè)數(shù)：22 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/zc/marking.html">ZC*；Package：SOT323；NPN wideband silicon RF transistor

文件：302.38 Kbytes 頁(yè)數(shù)：22 Pages

恩XP

NPN wideband silicon RF transistor

文件：302.38 Kbytes 頁(yè)數(shù)：22 Pages

PHI

PHI

NPN wideband silicon RF transistor

文件：289.72 Kbytes 頁(yè)數(shù)：21 Pages

恩XP

NPN wideband silicon RF transistor

文件：306.5 Kbytes 頁(yè)數(shù)：22 Pages

PHI

PHI