NPN wideband silicon germanium RF transistor

General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. Features and benefits ■ Low noise high gain microwave transistor ■ Noise figure (NF) = 0.8 dB at 5.8 GHz ■ High maximum power gain 18.5 dB at

文件：136.85 Kbytes 頁數(shù)：12 Pages

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

NPN wideband silicon germanium RF transistor

文件：136.85 Kbytes 頁數(shù)：12 Pages

PHI

PHI

NPN寬帶硅鍺RF晶體管

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 110 GHz fT silicon germanium technology\nHigh maximum power gain 18.5 dB at 5.8 GHz\nLow noise high gain microwave transistor\nNoise figure (NF) = 0.8 dB at 5.8 GHz;

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