NPN Wideband Silicon RF Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min.) · Low Noise, High Breakdown RF Transistor APPLICATIONS · Applications Requiring High Supply Voltages And High Breakdown Voltages · Low Noise Amplifiers For ISM Applications

文件：232.24 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

NPN wideband silicon RF transistor

文件：289.72 Kbytes 頁數(shù)：21 Pages

恩XP

NPN wideband silicon RF transistor

文件：306.5 Kbytes 頁數(shù)：22 Pages

PHI

PHI

NPN wideband silicon RF transistor

文件：313.34 Kbytes 頁數(shù)：22 Pages

PHI

PHI

NPN寬帶硅RF晶體管

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pindual-emitter SOT143B package.\nThe BFU550X is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz. Low noise, high breakdown RF transistor\nAEC-Q101 qualified\nMinimum noise figure (NFmin) = 0.75 dB at 900 MHz\nMaximum stable gain 21.5 dB at 900 MHz\n11 GHz fT silicon technology;

恩XP

NPN寬帶硅RF晶體管

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pindual-emitter SOT143R package.\nThe BFU550XR is part of the BFU5 family of transistors, suitable for small signal tomedium power applications up to 2 GHz. Low noise, high breakdown RF transistor\nAEC-Q101 qualified\nMinimum noise figure (NFmin) = 0.7 dB at 900 MHz\nMaximum stable gain 21.5 dB at 900 MHz\n11 GHz fT silicon technology;

恩XP