絲?。?a target="_blank" title="Marking" href="/-mu/marking.html">-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES ? Low current consumption (100 μA to 1 mA) ? Low noise figure ? Gold metallization ensures excellent reliability. APPLICATIONS ? RF low power amplifiers, such as pocket

文件：100.99 Kbytes 頁數(shù)：12 Pages

PHI

PHI

絲印：-MU；Package：SOT-143B；NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES ? Low current consumption (100 μA to 1 mA) ? Low noise figure ? Gold metallization ensures excellent reliability. APPLICATIONS ? RF low power amplifiers, such as pocket

文件：289.38 Kbytes 頁數(shù)：12 Pages

恩XP

NPN 5 GHz wideband transistor

FEATURES · Low current consumption (100 mA to 1 mA) · Low noise figure · Gold metallization ensures excellent reliability. APPLICATIONS · RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN silicon wideband transi

文件：288.83 Kbytes 頁數(shù)：12 Pages

恩XP

SOT-343

恩XP

上傳：深圳市英科美電子有限公司

SOT143

恩XP

上傳：深圳市英科美電子有限公司