絲?。?a target="_blank" title="Marking" href="/p6/marking.html">P6；Package：SOT-343R；NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES ? High power gain ? High efficiency ? Low noise figure ? High transition frequency ? Emitter is thermal lead ? Low feedback capaci

文件：160.23 Kbytes 頁數(shù)：16 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/p6/marking.html">P6；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

NPN wideband transistor

文件：390.2 Kbytes 頁數(shù)：16 Pages

PHI

PHI

NPN wideband transistor

文件：143.29 Kbytes 頁數(shù)：16 Pages

JMNIC

錦美電子

NPN wideband transistor

文件：143.29 Kbytes 頁數(shù)：16 Pages

JMNIC

錦美電子

NPN寬頻帶晶體管

NPN雙多晶硅寬帶晶體管 射極為熱超前\n高效率\n高功率增益\n高傳送頻率\n線性和非線性工作\n低反饋電容\n低噪聲;

恩XP