絲?。?a target="_blank" title="Marking" href="/p3/marking.html">P3；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

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絲?。?a target="_blank" title="Marking" href="/p3/marking.html">P3；Package：SOT-343R；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES ? Low current ? Very high power gain ? Low noise figure ? High transition frequency ? Very low feedback capacitance. APPLICATIONS

文件：106.97 Kbytes 頁數(shù)：12 Pages

PHI

PHI

NPN 17 GHz wideband transistor

文件：399.95 Kbytes 頁數(shù)：13 Pages

PHI

PHI

NPN 17 GHz wideband transistor

文件：92.56 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

NPN 17 GHz wideband transistor

文件：92.56 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

NPN 17 GHz寬頻帶晶體管

NPN雙多晶硅寬帶晶體管，具有埋層，適合低壓應(yīng)用，采用4針雙射極SOT343R塑料封裝。 高功率增益\n高傳送頻率\n低噪聲\n極低反饋電容;

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