NPN 25 GHz wideband transistor

General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. Features ■ Very high power gain ■ Low noise figure ■ High transition frequency ■ Emitter is thermal lead ■ Low feedback capacitance

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

NPN 25 GHz wideband transistor

文件：106.33 Kbytes 頁數(shù)：13 Pages

JMNIC

錦美電子

NPN 25 GHz wideband transistor

文件：106.33 Kbytes 頁數(shù)：13 Pages

JMNIC

錦美電子

NPN 25 GHz wideband transistor

OverviewNPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. \n\n?Emitter is thermal lead\n\n?High power gain\n\n?High transition frequency\n\n?Low feedback capacitance\n\n?Low noise;

恩XP