RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

NPN 25 GHz wideband transistor

文件：101.15 Kbytes 頁數(shù)：13 Pages

PHI

PHI

NPN 25 GHz wideband transistor

文件：108.4 Kbytes 頁數(shù)：13 Pages

JMNIC

錦美電子

NPN 25 GHz wideband transistor

文件：108.4 Kbytes 頁數(shù)：13 Pages

JMNIC

錦美電子

NPN 25 GHz wideband transistor

Overview NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Emitter is thermal lead\nHigh power gain\nHigh transition frequency\nLow feedback capacitance\nLow noise;

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