NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：75.97 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability Applications ? Intended for Radio Frequency (RF) fro

文件：168.74 Kbytes 頁(yè)數(shù)：13 Pages

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絲?。?a target="_blank" title="Marking" href="/a7/marking.html">A7；Package：SOT343R；NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability Applications ? Intended for Radio Frequency (RF) fro

文件：168.74 Kbytes 頁(yè)數(shù)：13 Pages

恩XP

絲印：A7*；Package：SOT-343R；NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：75.97 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：75.97 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability Applications ? Intended for Radio Frequency (RF) fro

文件：168.74 Kbytes 頁(yè)數(shù)：13 Pages

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

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NPN 14 GHz wideband transistor

文件：82.64 Kbytes 頁(yè)數(shù)：12 Pages

JMNIC

錦美電子

NPN 14 GHz wideband transistor

文件：82.64 Kbytes 頁(yè)數(shù)：12 Pages

JMNIC

錦美電子

NPN 14 GHz寬頻帶晶體管

NPN硅平面外延晶體管，采用4針雙射極SOT343R塑料封裝。 金屬化鍍金確保極佳的可靠性\n高功率增益\n高傳送頻率\n低噪聲;

恩XP