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          APT10M11LVR
          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
          
Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout..


? Faster Switch
          文件：65.269 Kbytes 頁(yè)數(shù)：4 Pages
          ADPOW
          

          APT10M19BVFR
          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
          
Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.
? Faster Switching

          文件：74.1 Kbytes 頁(yè)數(shù)：4 Pages
          ADPOW
          

          APT10M19BVFR
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current –ID= 75A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 19mΩ(Max)@VGS= 10V
·100 avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC co
          文件：372.04 Kbytes 頁(yè)數(shù)：2 Pages
          ISC
          無(wú)錫固電
          

          APT10M19BVR
          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
          
Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.
? Faster Switching

          文件：67.26 Kbytes 頁(yè)數(shù)：4 Pages
          ADPOW
          

          APT10M25
          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
          
Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.
? Faster Switching

          文件：69.27 Kbytes 頁(yè)數(shù)：4 Pages
          ADPOW
          

          APT10M25BVFR
          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
          
Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.
? Faster Switching

          文件：69.27 Kbytes 頁(yè)數(shù)：4 Pages
          ADPOW
          

          APT10M25SVR
          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
          
Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.
? Faster Switching

          文件：68.23 Kbytes 頁(yè)數(shù)：4 Pages
          ADPOW
          

          APT10M30AVR
          Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
          
Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.
? Faster Switching

          文件：66.51 Kbytes 頁(yè)數(shù)：4 Pages
          ADPOW
          

          APT10M30AVR
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current : ID= 65A@ TC=25℃
·Drain Source Voltage
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 30Ω(Max) @ VGS= 10V
·100 avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

DESCRIPTION
·motor drive, DC-DC
          文件：330.93 Kbytes 頁(yè)數(shù)：2 Pages
          ISC
          無(wú)錫固電
          

          APT11N80BC3
          isc N-Channel MOSFET Transistor
          
FEATURES
·Drain Current : ID= 11A@ TC=25℃
·Drain Source Voltage
: VDSS= 800V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.45Ω(Max) @ VGS= 10V
·100 avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

DESCRIPTION
·motor drive, DC-
          文件：338.4 Kbytes 頁(yè)數(shù)：2 Pages
          ISC
          無(wú)錫固電
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Status：
            In Production
          • Product Type：
            Si Diode
          • VRRM (V)：
            600
          • VF (V)：
            1.6
          • Current (A) Tc=80 C：
            100
          • Silicon Type：
            FRED diode
          • PKG：
            SOT-227
          
            
          
        
          
            
          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          
                
          



          Microchip
          		

          		

          		

          1000
          		

          只做正品
          		
詢價(jià)
          

          



          PAZ
          		

          17+
          		

          DIP-5
          		

          9700
          		

          只做全新進(jìn)口原裝,現(xiàn)貨庫(kù)存
          		
詢價(jià)
          

          



          APT
          		

          23+
          		

          TO-247
          		

          3200
          		

          絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
          		
詢價(jià)
          

          



          DIODES/美臺(tái)
          		

          24+
          		

          TO92
          		

          6000
          		

          全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
          		
詢價(jià)
          

          



          MICROSEMI
          		

          25+
          		

          TO-247
          		

          20000
          		

          原裝正品價(jià)格優(yōu)惠,志同道合共謀發(fā)展
          		
詢價(jià)
          

          



          		

          		

          		

          0
          		

          		
詢價(jià)
          

          



          APT
          		

          22+
          		

          原廠原封
          		

          8200
          		

          原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!
          		
詢價(jià)
          

          



          原裝MICROCHIP
          		

          25+
          		

          TO247
          		

          8880
          		

          原裝認(rèn)準(zhǔn)芯澤盛世！
          		
詢價(jià)
          

          



          EDISON
          		

          20+
          		

          標(biāo)準(zhǔn)
          		

          88720
          		

          紅外全新原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
          		
詢價(jià)
          

          



          Kingb
          		

          25
          		

          		

          3010
          		

          原裝正品
          		
詢價(jià)
          

            
          
        
          
        
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            更新時(shí)間2026-1-20 14:01:00
        
          
        
          
          
          
            
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