| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件：337.37 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：316.53 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Identical Specific 文件：39.9 Kbytes 頁(yè)數(shù)：2 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching 文件：63.27 Kbytes 頁(yè)數(shù)：4 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- 文件：336.31 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching 文件：70.8 Kbytes 頁(yè)數(shù)：4 Pages | ADPOW | ADPOW | ||
ISOTOP Boost chopper MOSFET Power Module Features ? Power MOS V? MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged ? ISOTOP? Package (SOT-227) ? Very low stray inductance ? High level of integration Benefits ? Outstand 文件：730.39 Kbytes 頁(yè)數(shù)：7 Pages | ADPOW | ADPOW | ||
ISOTOP Boost chopper MOSFET Power Module Features ? Power MOS V? MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged ? ISOTOP? Package (SOT-227) ? Very low stray inductance ? High level of integration Benefits ? Outstand 文件：705.75 Kbytes 頁(yè)數(shù)：7 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
ISOTOP Buck chopper MOSFET Power Module Features ? Power MOS V? MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged ? ISOTOP? Package (SOT-227) ? Very low stray inductance ? High level of integration Benefits ? Outstand 文件：706.1 Kbytes 頁(yè)數(shù)：7 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
ISOTOP Buck chopper MOSFET Power Module Features ? Power MOS V? MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged ? ISOTOP? Package (SOT-227) ? Very low stray inductance ? High level of integrati Benefits ? Outstandin 文件：730.66 Kbytes 頁(yè)數(shù)：7 Pages | ADPOW | ADPOW |
技術(shù)參數(shù)
- Status：
In Production
- Product Type：
Si Diode
- VRRM (V)：
600
- VF (V)：
1.6
- Current (A) Tc=80 C：
100
- Silicon Type：
FRED diode
- PKG：
SOT-227
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Microchip |
1000 |
只做正品 |
詢價(jià) | ||||
原裝MICROCHIP |
25+ |
TO247 |
8880 |
原裝認(rèn)準(zhǔn)芯澤盛世！ |
詢價(jià) | ||
APT |
23+ |
TO-3P |
3000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
PAZ |
17+ |
DIP-5 |
9700 |
只做全新進(jìn)口原裝,現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
MICROSEMI |
25+ |
TO-247 |
20000 |
原裝正品價(jià)格優(yōu)惠,志同道合共謀發(fā)展 |
詢價(jià) | ||
KINGBRIG |
15+ROHS |
SMD |
441500 |
原裝進(jìn)口價(jià)格優(yōu)勢(shì)大量現(xiàn)貨供應(yīng) |
詢價(jià) | ||
APT |
23+ |
TO-247 |
3200 |
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
NS |
2023+ |
TO-264 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價(jià) | ||
GECRITICAL |
25+ |
GECRITICAL |
11 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
0 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- TL074
相關(guān)庫(kù)存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
