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          首頁 >APT>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          APT11N80KC3

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

          文件:299 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1201R2BFLL

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.25Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:372.12 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1201R2BLL

          Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

          POWER MOS 7? Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

          文件:69.73 Kbytes 頁數(shù):2 Pages

          ADPOW

          APT1201R2SLL

          Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

          POWER MOS 7? Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

          文件:69.73 Kbytes 頁數(shù):2 Pages

          ADPOW

          APT1201R4BFLL

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

          文件:372.27 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          APT1201R4BFLL

          POWER MOS 7 R FREDFET

          ? Lower Input Capacitance ? Lower Miller Capacitance ? Lower Gate Charge, Qg ? Increased Power Dissipation ? Easier To Drive ? TO-247 or Surface Mount D3PAK Package

          文件:418.26 Kbytes 頁數(shù):5 Pages

          MICROSEMI

          美高森美

          APT1201R4BFLLG

          POWER MOS 7 R FREDFET

          ? Lower Input Capacitance ? Lower Miller Capacitance ? Lower Gate Charge, Qg ? Increased Power Dissipation ? Easier To Drive ? TO-247 or Surface Mount D3PAK Package

          文件:418.26 Kbytes 頁數(shù):5 Pages

          MICROSEMI

          美高森美

          APT1201R4BLL

          Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

          POWER MOS 7? Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

          文件:69.76 Kbytes 頁數(shù):2 Pages

          ADPOW

          APT1201R4SFLL

          POWER MOS 7 R FREDFET

          ? Lower Input Capacitance ? Lower Miller Capacitance ? Lower Gate Charge, Qg ? Increased Power Dissipation ? Easier To Drive ? TO-247 or Surface Mount D3PAK Package

          文件:418.26 Kbytes 頁數(shù):5 Pages

          MICROSEMI

          美高森美

          APT1201R4SFLLG

          POWER MOS 7 R FREDFET

          ? Lower Input Capacitance ? Lower Miller Capacitance ? Lower Gate Charge, Qg ? Increased Power Dissipation ? Easier To Drive ? TO-247 or Surface Mount D3PAK Package

          文件:418.26 Kbytes 頁數(shù):5 Pages

          MICROSEMI

          美高森美

          技術(shù)參數(shù)

          • Status:

            In Production

          • Product Type:

            Si Diode

          • VRRM (V):

            600

          • VF (V):

            1.6

          • Current (A) Tc=80 C:

            100

          • Silicon Type:

            FRED diode

          • PKG:

            SOT-227

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          Microchip
          1000
          只做正品
          詢價(jià)
          PAZ
          17+
          DIP-5
          9700
          只做全新進(jìn)口原裝,現(xiàn)貨庫存
          詢價(jià)
          原裝MICROCHIP
          25+
          TO247
          8880
          原裝認(rèn)準(zhǔn)芯澤盛世!
          詢價(jià)
          APT
          23+
          TO-3P
          3000
          專做原裝正品,假一罰百!
          詢價(jià)
          0
          詢價(jià)
          APT
          23+
          TO-247
          3200
          絕對全新原裝!優(yōu)勢供貨渠道!特價(jià)!請放心訂購!
          詢價(jià)
          MICROSEMI
          25+
          TO-247
          20000
          原裝正品價(jià)格優(yōu)惠,志同道合共謀發(fā)展
          詢價(jià)
          APT
          22+
          原廠原封
          8200
          原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢!!
          詢價(jià)
          KINGBRIG
          15+ROHS
          SMD
          441500
          原裝進(jìn)口價(jià)格優(yōu)勢大量現(xiàn)貨供應(yīng)
          詢價(jià)
          MICROSEMI
          2018+
          26976
          代理原裝現(xiàn)貨/特價(jià)熱賣!
          詢價(jià)
          更多APT供應(yīng)商 更新時(shí)間2026-1-20 14:01:00
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