| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HIGH VOLTAGE SCHOTTKY DIODE PRODUCT FEATURES ? Ultrafast Recovery Times ? Soft Recovery Characteristics ? Popular TO-247 Package or Surface Mount D3PAK Package ? Low Forward Voltage ? High Blocking Voltage ? Low Leakage Current PRODUCT BENEFITS ? Low Losses ? Low Noise Switching ? Cooler Operation ? Higher Reliabi 文件：1.54496 Mbytes 頁數(shù)：4 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
HIGH VOLTAGE SCHOTTKY DIODE DESCRIPTION · Low Forward Voltage · High Blocking Voltage · Low Leakage Current · Ultrafast Recovery Times APPLICATIONS · Switchmode Power Supply · Motor Controllers · Uninterruptible Power Supply (UPS) · 48 Volt Output Rectifiers · High Speed Rectifiers 文件：308.94 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Schottky Diode FEATURES · Low forward voltage drop · Low Leakage Current · Ultrafast recovery time APPLICATIONS · Switch mode Power Supply · Inverters · Motor Controllers · Converters 文件：240.62 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7? MOSFET Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses alon 文件：2.83333 Mbytes 頁數(shù)：44 Pages | MICROSEMI 美高森美 | MICROSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 106A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c 文件：372.37 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 106A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c 文件：328.4 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switchi 文件：73.03 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
High Voltage N-Channel enhancement mode power MOSFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery Body 文件：121.22 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switchi 文件：73.03 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Identical Specific 文件：39.9 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW |
技術(shù)參數(shù)
- Status：
In Production
- Product Type：
Si Diode
- VRRM (V)：
600
- VF (V)：
1.6
- Current (A) Tc=80 C：
100
- Silicon Type：
FRED diode
- PKG：
SOT-227
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Microchip |
1000 |
只做正品 |
詢價(jià) | ||||
原裝MICROCHIP |
25+ |
TO247 |
8880 |
原裝認(rèn)準(zhǔn)芯澤盛世！ |
詢價(jià) | ||
APT |
25+ |
PLCC84 |
3600 |
大量現(xiàn)貨庫存,提供一站式服務(wù)! |
詢價(jià) | ||
TOS |
04+ |
TO-3P |
995200 |
原裝現(xiàn)貨價(jià)格優(yōu)勢-含16%增值稅 |
詢價(jià) | ||
MICROSEMI |
25+ |
TO-247 |
20000 |
原裝正品價(jià)格優(yōu)惠,志同道合共謀發(fā)展 |
詢價(jià) | ||
KINGBRIG |
15+ROHS |
SMD |
441500 |
原裝進(jìn)口價(jià)格優(yōu)勢大量現(xiàn)貨供應(yīng) |
詢價(jià) | ||
MICROSE |
16+ |
TO-247 |
100 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
APT |
專業(yè)鐵帽 |
TO-3 |
67500 |
鐵帽原裝主營-可開原型號(hào)增稅票 |
詢價(jià) | ||
MICROCHIP |
22+ |
500 |
優(yōu)勢渠道原裝現(xiàn)貨 |
詢價(jià) | |||
APT |
20+ |
TO-247 |
1000 |
進(jìn)口原裝現(xiàn)貨假一賠萬力挺實(shí)單 |
詢價(jià) |
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