isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：309.4 Kbytes 頁數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=10A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：359.38 Kbytes 頁數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=9A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：360.21 Kbytes 頁數(shù)：2 Pages

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Gallium Arsenide CATV Integrated Amplifier Module

Description ? 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module Features ? Specified for 79-, 112- and 132-Channel Loading ? Excellent Distortion Performance ? Built-in Input Diode Protection ? GaAs FET Transistor Technology ? Unconditi

文件：139.47 Kbytes 頁數(shù)：8 Pages

FREESCALEFreescale Semiconductor, Inc

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