| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching 文件：60.86 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.53Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：328 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching 文件：58.87 Kbytes 頁數(shù)：4 Pages | ADPOW | ADPOW | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses along with exceptionally 文件：71.5 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.78Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：372.74 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.78Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：372.73 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses along with exceptionally 文件：69.59 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses along with exceptionally 文件：71.5 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7? is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7? by significantly lowering RDS(ON) and Qg. Power MOS 7? combines lower conduction and switching losses along with exceptionally 文件：69.59 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally 文件：35.76 Kbytes 頁數(shù)：2 Pages | ADPOW | ADPOW |
技術(shù)參數(shù)
- Status：
In Production
- Product Type：
Si Diode
- VRRM (V)：
600
- VF (V)：
1.6
- Current (A) Tc=80 C：
100
- Silicon Type：
FRED diode
- PKG：
SOT-227
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Microchip |
1000 |
只做正品 |
詢價 | ||||
PAZ |
17+ |
DIP-5 |
9700 |
只做全新進(jìn)口原裝,現(xiàn)貨庫存 |
詢價 | ||
原裝MICROCHIP |
25+ |
TO247 |
8880 |
原裝認(rèn)準(zhǔn)芯澤盛世！ |
詢價 | ||
MICROSEMI |
25+ |
TO-247 |
20000 |
原裝正品價格優(yōu)惠,志同道合共謀發(fā)展 |
詢價 | ||
APT |
22+ |
原廠原封 |
8200 |
原裝現(xiàn)貨庫存.價格優(yōu)勢!! |
詢價 | ||
APT |
23+ |
TO-3P |
3000 |
專做原裝正品,假一罰百! |
詢價 | ||
0 |
詢價 | ||||||
KINGBRIG |
15+ROHS |
SMD |
441500 |
原裝進(jìn)口價格優(yōu)勢大量現(xiàn)貨供應(yīng) |
詢價 | ||
Panasonic |
新 |
7 |
全新原裝 貨期兩周 |
詢價 | |||
APT |
23+ |
TO-247 |
3200 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 |
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