Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

文件：35.76 Kbytes 頁(yè)數(shù)：2 Pages

ADPOW

POWER MOS VI 1000V 13A 0.860 Ohm

APT

晶科電子

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery Body

文件：68.78 Kbytes 頁(yè)數(shù)：4 Pages

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.86Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：372.82 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Faster Switching

文件：66.07 Kbytes 頁(yè)數(shù)：4 Pages

ADPOW